ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,436,458, issued on Oct. 7, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Photoresist composition and method of forming photoresist pattern" was invented by An-Ren Zi (Hsinchu, Taiwan), Chin-Hsiang Lin (Hsinchu, Taiwan) and Ching-Yu Chang (Yuansun Village, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a photoresist pattern includes forming a protective layer over a photoresist layer formed on a substrate, and selectively exposing the protective layer and the photoresist layer to actinic radiation. The protective layer and the photoresist layer are developed to form a pattern in the photores...