ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,680, issued on Oct. 7, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Multi-gate device and related methods" was invented by Kuan-Ting Pan (Taipei, Taiwan), Zhi-Chang Lin (Hsinchu County, Taiwan), Yi-Ruei Jhan (Keelung, Taiwan), Chih-Hao Wang (Hsinchu County, Taiwan), Huan-Chieh Su (Changhua County, Taiwan), Shi Ning Ju (Hsinchu, Taiwan) and Kuo-Cheng Chiang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a device includes forming a dummy gate over a plurality of fins. Thereafter, a first portion of the dummy gate is removed to form a first trench that exposes a first hyb...