US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 7 for "Methods for reducing contact depth variation in semiconductor fabrication" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,438,049, issued on Oct. 7, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD (Hsinchu, Taiwan).

"Methods for reducing contact depth variation in semiconductor fabrication" was invented by Yun Lee (Taipei County, Taiwan), Chen-Ming Lee (Taoyuan County, Taiwan), Fu-Kai Yang (Hsinchu, Taiwan), Yi-Jyun Huang (New Taipei, Taiwan), Sheng-Hsiung Wang (Hsinchu County, Taiwan) and Mei-Yun Wang (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit includes a substrate, an isolation feature disposed over the substrate, a fin extending from the substrate above the isolation feature, and a gate structure disposed directly ove...