US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 7 for "Method of manufacturing semiconductor devices including forming an air gap based on removing a recessed sacrificial layer" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,624, issued on Oct. 7, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of manufacturing semiconductor devices including forming an air gap based on removing a recessed sacrificial layer" was invented by Chih-Hung Sun (Hsinchu, Taiwan), Po-Hsien Cheng (Hsinchu, Taiwan), Zhen-Cheng Wu (Hsinchu, Taiwan) and Chi-On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method of manufacturing a semiconductor device, a metal gate structure is formed and cut into two pieces of metal gate structures by forming a gate end spaces. A first liner layer is formed in the gate end space, and a sacrifici...