US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 7 for "Integration of low and high voltage devices on substrate" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,663, issued on Oct. 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Integration of low and high voltage devices on substrate" was invented by Hsin Fu Lin (Hsinchu County, Taiwan) and Tsung-Hao Yeh (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a semiconductor structure that includes a well region and a semiconductor substrate. The well region is disposed within the semiconductor substrate. The well region includes a plurality of first regions separated by a plurality of second regions, where the plurality of first regions is of a first doping and the plurality of se...