US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 7 for "High capacitance MIM device with self aligned spacer" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,438,042, issued on Oct. 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"High capacitance MIM device with self aligned spacer" was invented by Hsuan-Han Tseng (Tainan, Taiwan), Chun-Yuan Chen (Tainan, Taiwan), Lu-Sheng Chou (Tainan, Taiwan), Hsiao-Hui Tseng (Tainan, Taiwan) and Jhy-Jyi Sze (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure, in some embodiments, relates to a method of forming a capacitor structure. The method includes forming a capacitor dielectric layer over a lower electrode layer, and forming an upper electrode layer over the capacitor dielectric layer. The upper el...