US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 7 for "FUSI gated device formation" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,679, issued on Oct. 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"FUSI gated device formation" was invented by Yi-Huan Chen (Hsin Chu, Taiwan), Chien-Chih Chou (New Taipei, Taiwan), Ta-Wei Lin (Minxiong Township, Taiwan), Hsiao-Chin Tuan (Taowan, Taiwan), Alexander Kalnitsky (San Francisco), Kong-Beng Thei (Pao-Shan Village, Taiwan) and Chia-Hong Wu (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards a method for forming an integrated chip. The method includes forming a stack of gate layers over a substrate. The stack of gate layers in...