ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,643, issued on Oct. 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Fin shape modification" was invented by Ssu-Yu Liao (Hsinchu, Taiwan), Ta-Wei Lin (Hsinchu, Taiwan), Tsu-Hui Su (Taipei, Taiwan), Chun-Hsiang Fan (Hsinchu, Taiwan), Ming-Hsi Yeh (Hsinchu, Taiwan) and Kuo-Bin Huang (Jhubei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Fin and nanostructured channel structure formation techniques for three-dimensional transistors can tune device performance. For example, fin profile control can be achieved by modifying the shape of fins/nanostructured channel structures so as to reduce their line edge roughne...