US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 7 for "Field plate and isolation structure for high voltage device" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,668, issued on Oct. 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Field plate and isolation structure for high voltage device" was invented by Kaochao Chen (Hsinchu, Taiwan), Chia-Cheng Ho (Hsinchu, Taiwan) and Ming Chyi Liu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated chip includes a gate structure overlying a substrate between a source region and a drain region. A field plate is disposed within a first dielectric layer overlying the substrate. The field plate is laterally offset from the gate structure by a non-zero distance in a direction towards the drain region. An isolation s...