US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 7 for "Field effect transistors with dual silicide contact structures" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,623, issued on Oct. 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Field effect transistors with dual silicide contact structures" was invented by Peng-Wei Chu (Hsinchu, Taiwan), Yasutoshi Okuno (Hsinchu, Taiwan), Ding-Kang Shih (New Taipei, Taiwan) and Sung-Li Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The structure of a semiconductor device with dual silicide contact structures and a method of fabricating the semiconductor device are disclosed. A method of fabricating the semiconductor device includes forming first and second fin structures on a substrate, forming first and second...