US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 7 for "FET with wrap-around silicide and fabrication methods thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,638, issued on Oct. 7, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"FET with wrap-around silicide and fabrication methods thereof" was invented by Pei-Hsun Wang (Kaohsiung, Taiwan), Chih-Chao Chou (Hsinchu, Taiwan), Shih-Cheng Chen (New Taipei, Taiwan), Jung-Hung Chang (Changhua County, Taiwan), Jui-Chien Huang (Hsinchu, Taiwan), Chun-Hsiung Lin (Hsinchu County, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device that includes a semiconductor fin disposed over a substrate, an isolation structure at least partially sur...