US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 7 for "Diffusion barrier layer for source and drain structures to increase transistor performance" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,662, issued on Oct. 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Diffusion barrier layer for source and drain structures to increase transistor performance" was invented by Kuei-Ming Chen (New Taipei, Taiwan), Chi-Ming Chen (Zhubei, Taiwan) and Chung-Yi Yu (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards an integrated chip including a first transistor on a semiconductor substrate. The first transistor includes a first gate structure over the semiconductor substrate, a first pair of source/drain regions on opposing sides of the firs...