US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 7 for "Deep trench capacitor and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,582, issued on Oct. 7, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Deep trench capacitor and method for forming the same" was invented by Ming-Hsun Lin (Hsinchu, Taiwan) and Jyun-Ying Lin (Yilan County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Integrated circuits (ICs) and methods are provided. An IC includes a charge-storing device. The charge-storing device includes a first charge-storing stack extending into a substrate, and a second charge-storing stack extending into the substrate and adjacent to the first charge-storing stack along a first direction. The first charge-storing stack and the sec...