US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 7 for "Confined source/drain epitaxy regions and method forming same" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,657, issued on Oct. 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Confined source/drain epitaxy regions and method forming same" was invented by Jeng-Wei Yu (New Taipei, Taiwan), Tsz-Mei Kwok (Hsinchu, Taiwan), Tsung-Hsi Yang (Zhubei, Taiwan), Li-Wei Chou (Hsinchu, Taiwan) and Ming-Hua Yu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming isolations extending into a semiconductor substrate, recessing the isolation regions, wherein a semiconductor region between the isolation regions forms a semiconductor fin, forming a first dielectric layer on the isolation regions and the s...