US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 7 for "CMOS fabrication methods for back-gate transistor" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,650, issued on Oct. 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"CMOS fabrication methods for back-gate transistor" was invented by Chun-Chieh Lu (Taipei, Taiwan), Tzu Ang Chao (Hsinchu, Taiwan), Chao-Ching Cheng (Hsinchu, Taiwan) and Lain-Jong Li (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a semiconductor substrate, a low-k dielectric layer over the semiconductor substrate, an isolation layer over the low-k dielectric layer, and a work function layer over the isolation layer. The work function layer is an n-type work function layer. The device further includes a low-dimensio...