US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 7 for "Cascaded bipolar junction transistor and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,619, issued on Oct. 7, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Cascaded bipolar junction transistor and methods of forming the same" was invented by Hong-Shyang Wu (Taipei, Taiwan) and Kuo-Ming Wu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device and methods of forming the same are described. The device includes a substrate and a first bipolar junction transistor (BJT) disposed over the substrate. The first BJT includes a first base region, a first emitter region, and a first collector region. The device further includes a second BJT disposed over the substrate adjacent the first BJT,...