US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 28 for "Source and drain engineering process for multigate devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,770, issued on Oct. 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Source and drain engineering process for multigate devices" was invented by Po-Yu Lin (New Taipei, Taiwan), Wei-Yang Lee (Taipei, Taiwan), Chia-Pin Lin (Hsinchu County, Taiwan), Tzu-Hua Chiu (Hsinchu, Taiwan), Kuan-Hao Cheng (Hsinchu, Taiwan), Wei-Han Fan (Hsin-Chu, Taiwan), Yee-Chia Yeo (Hsinchu, Taiwan) and Wei Hao Lu (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Multi-gate devices and methods for fabricating such are disclosed herein. An exemplary method includes forming a semiconductor stack on a substrate, wherein the se...