ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,812, issued on Oct. 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Semiconductor structure and method of manufacturing the same" was invented by Feng-Chien Hsieh (Pingtung County, Taiwan), Yun-Wei Cheng (Taipei, Taiwan), Wei-Li Hu (Tainan, Taiwan), Kuo-Cheng Lee (Tainan, Taiwan) and Cheng-Ming Wu (Tainan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An image sensor device includes a semiconductor substrate having a first side, and a trench isolation structure dividing the substrate into sensing units. Each sensing unit includes a first gate electrode and a second gate electrode disposed on the first ...