ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,454,455, issued on Oct. 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd. (Hsin-Chu, Taiwan).
"Semiconductor structure and method of making" was invented by Hsi-Cheng Hsu (Taichung, Taiwan), Chen-Wei Chiang (Hsinchu, Taiwan), Jui-Chun Weng (Taipei, Taiwan), Hsin-Yu Chen (Hsinchu, Taiwan) and Chia Yu Lin (Taoyuan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, a semiconductor device is provided. The semiconductor device includes a semiconductor layer, a micro-electromechanical systems (MEMS) structure defined in the semiconductor layer, a bond ring over the semiconductor layer, and a cap structure over the ME...