US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 28 for "Semiconductor-on-insulator (SOI) substrate and method for forming" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,456,618, issued on Oct. 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor-on-insulator (SOI) substrate and method for forming" was invented by Cheng-Ta Wu (Shueishang Township, Taiwan), Chia-Ta Hsieh (Tainan, Taiwan), Kuo Wei Wu (Tainan, Taiwan), Yu-Chun Chang (Tainan, Taiwan) and Ying Ling Tseng (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present application are directed towards a semiconductor-on-insulator (SOI) substrate. The SOI substrate includes a handle substrate; a device layer overlying the handle substrate; and an insulator layer separating the han...