US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 28 for "Semiconductor device including first and second transistor channels" (Belgian, Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,456,676, issued on Oct. 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd. (Hsin-Chu, Taiwan).

"Semiconductor device including first and second transistor channels" was invented by Gerben Doornbos (Kessel-Lo, Belgium) and Mauricio Manfrini (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The semiconductor device includes a memory structure including a first transistor channel, a gate structure overlying the first transistor channel, and a second transistor channel overlying the gate structure. The gate structure includes a control gate."

The patent was filed on April 20, 2022, under App...