US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 28 for "Semiconductor device including conductive nitride feature and method of making the semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,790, issued on Oct. 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device including conductive nitride feature and method of making the semiconductor device" was invented by Po-Chin Chang (Hsinchu, Taiwan), Yuting Cheng (Hsinchu, Taiwan), Hsu-Kai Chang (Hsinchu, Taiwan), Chia-Hung Chu (Hsinchu, Taiwan), Tzu-Pei Chen (Hsinchu, Taiwan), Shuen-Shin Liang (Hsinchu, Taiwan), Sung-Li Wang (Hsinchu, Taiwan), Pinyen Lin (Hsinchu, Taiwan) and Lin-Yu Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor structure, a conductive nitride feature...