US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 28 for "Replacement gate methods that include treating spacers to widen gate" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,456,623, issued on Oct. 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Replacement gate methods that include treating spacers to widen gate" was invented by Shu-Han Chen (Hsinchu, Taiwan), Tsung-Ju Chen (Hsinchu, Taiwan), Ta-Hsiang Kung (New Taipei, Taiwan), Xiong-Fei Yu (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method may include forming a dummy dielectric layer over a substrate, and forming a dummy gate over the dummy dielectric layer. The method may also include forming a first spacer adjacent the dummy gate, and removing the dummy gate to form a cavity, wh...