US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 28 for "Passivation layer for a semiconductor device and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,456,655, issued on Oct. 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Passivation layer for a semiconductor device and method for manufacturing the same" was invented by Li Chun Liu (Kaohsiung, Taiwan), Chun Tang Wang (Tainan, Taiwan), Chih Hung Wang (Taipei, Taiwan), Ching Feng Lee (Tainan, Taiwan) and Yu-Lung Yeh (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an ultra-thick metal (UTM) structure. The semiconductor device includes a passivation layer including a first passivation oxide. The first passivation oxide includes an unbias film and a first bias film, wher...