US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 28 for "Multi-gate device and method of fabrication thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,774, issued on Oct. 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Multi-gate device and method of fabrication thereof" was invented by I-Sheng Chen (Taipei, Taiwan), Yee-Chia Yeo (Hsinchu, Taiwan), Chih Chieh Yeh (Taipei, Taiwan) and Cheng-Hsien Wu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a fin extending from a substrate. The fin has a source/drain region and a channel region. The channel region includes a first semiconductor layer and a second semiconductor layer disposed over the first semiconductor layer and vertically separated from the first semicon...