US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 28 for "Method and structure for gate-all-around devices with deep S/D contacts" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,769, issued on Oct. 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Method and structure for gate-all-around devices with deep S/D contacts" was invented by Chih-Chuan Yang (Hsinchu, Taiwan), Shih-Hao Lin (Hsinchu, Taiwan) and Yu-Kuan Lin (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes providing a substrate, a source/drain (S/D) feature and semiconductor channel layers over the substrate, a high-k metal gate (HKMG) wrapping around the channel layers, a dielectric cap over the HKMG, a contact etch stop layer (CESL) over the S/D feature and on sidewalls of the dielectric cap and the ...