ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,766, issued on Oct. 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Metal gate structures of semiconductor devices" was invented by Chung-Liang Cheng (Changhua County, Taiwan) and Ziwei Fang (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a semiconductor device includes forming first and second nanostructured layers arranged in an alternating configuration on a substrate, forming first and second nanostructured channel regions in the first nanostructured layers, forming first and second gate-all-around structures wrapped around each of the first and second nanostructured cha...