ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,456,511, issued on Oct. 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory circuit and method of operating same" was invented by Sanjeev Kumar Jain (Hsinchu, Taiwan), Ishan Khera (Hsinchu, Taiwan) and Atul Katoch (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory circuit includes a global control circuit, a first local control circuit and a first set of word line post-decoder circuits. The global control circuit is configured to generate a first and second set of global pre-decoder signals and a first set of local address signals. The first local control circuit includes a first set of re...