US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 28 for "Manufacturing method of semiconductor device having frontside and backside contacts" (Taiwanese Inventor)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,796, issued on Oct. 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Manufacturing method of semiconductor device having frontside and backside contacts" was invented by Jhon Jhy Liaw (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a first transistor comprising a first channel region, a first gate structure surrounding the first channel region, and first source/drain regions on opposite sides of the first gate structure; forming a second transistor comprising a second channel region, a second gate structure surrounding the second channel region, and second source...