US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 28 for "Interfacial layer with high texture uniformity for ferroelectric layer enhancement" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,751, issued on Oct. 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Interfacial layer with high texture uniformity for ferroelectric layer enhancement" was invented by Tzu-Yu Chen (Kaohsiung, Taiwan), Sheng-Hung Shih (Hsinchu, Taiwan), Fu-Chen Chang (New Taipei, Taiwan) and Kuo-Chi Tu (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards a memory cell in which an interfacial layer is on a bottom of a ferroelectric layer, between a bottom electrode and a ferroelectric layer. The interfacial layer is a different material than the bottom el...