US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 28 for "Dummy stacked structures surrounding TSVs and method forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,456,696, issued on Oct. 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Dummy stacked structures surrounding TSVs and method forming the same" was invented by Mingni Chang (Hsinchu, Taiwan), Yun-Chin Tsou (Hsinchu, Taiwan), Ching-Jing Wu (Zaoqiao Township, Taiwan), Shiou-Fan Chen (Hsinchu, Taiwan) and Ming-Yih Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a plurality of low-k dielectric layers over a semiconductor substrate, forming a first plurality of dummy stacked structures extending into at least one of the plurality of low-k dielectric layers, forming a plurality ...