US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 28 for "Dual side contact structures for source/drain regions in semiconductor transistor devices and method of forming" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,794, issued on Oct. 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Dual side contact structures for source/drain regions in semiconductor transistor devices and method of forming" was invented by Shih-Chuan Chiu (Hsinchu, Taiwan), Chia-Hao Chang (Hsinchu, Taiwan), Cheng-Chi Chuang (New Taipei, Taiwan), Chih-Hao Wang (Baoshan Township, Taiwan), Huan-Chieh Su (Tianzhong Township, Taiwan), Chun-Yuan Chen (Hsinchu, Taiwan), Li-Zhen Yu (New Taipei, Taiwan) and Yu-Ming Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with dual side source/drain (S/D) contact structures and a me...