ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,798, issued on Oct. 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Dielectric liner for field effect transistors" was invented by Zhi-Chang Lin (Zhubei, Taiwan), Shih-Cheng Chen (Taipei, Taiwan), Kuo-Cheng Chiang (Zhubei, Taiwan), Kuan-Ting Pan (Taipei, Taiwan), Jung-Hung Chang (Changhua County, Taiwan), Lo-Heng Chang (Hsinchu, Taiwan) and Chien Ning Yao (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a semiconductor structure with a dielectric liner. The semiconductor structure includes a substrate and a fin structure on the substrate. The fin structure includes a...