US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 21 for "Work-function layers in the gates of pFETs" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,153, issued on Oct. 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Work-function layers in the gates of pFETs" was invented by Hsin-Yi Lee (Hsinchu, Taiwan), Yen-Tien Tung (Hsinchu, Taiwan), Ji-Cheng Chen (Hsinchu, Taiwan), Weng Chang (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a dummy gate stack over a semiconductor region, forming a source/drain region on a side of the dummy gate stack, removing the dummy gate stack to form a trench, with the semiconductor region being exposed to the trench, forming a gate dielectric layer extending...