US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 21 for "Transistors with stacked channels and the methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,116, issued on Oct. 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan).

"Transistors with stacked channels and the methods of forming the same" was invented by Kuo-Cheng Chiang (Zhubei, Taiwan), Chi-Wen Liu (Hsinchu, Taiwan) and Ying-Keung Leung (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a first semiconductor strip, a first gate dielectric encircling the first semiconductor strip, a second semiconductor strip overlapping the first semiconductor strip, and a second gate dielectric encircling the second semiconductor strip. The first gate dielectric contacts the first gate dielectr...