US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 21 for "Transistor structure and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,133, issued on Oct. 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Transistor structure and method of forming the same" was invented by Chien-Hao Huang (Hsinchu, Taiwan), Gao-Ming Wu (New Taipei, Taiwan), Katherine H Chiang (New Taipei, Taiwan) and Chung-Te Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a transistor structure and a method of forming the same. The transistor structure includes a gate electrode; a gate dielectric layer, disposed on the gate electrode; an active layer, disposed on the gate dielectric layer; a pair of source/drain (S/D) features, disposed on the activ...