ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,401, issued on Oct. 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Thermal dissipation in semiconductor devices" was invented by Wen-Sheh Huang (Hsinchu, Taiwan), Yu-Hsiang Chen (Hsinchu, Taiwan) and Chii-Ping Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a device layer comprising a first transistor; a first interconnect structure on a front-side of the device layer; and a second interconnect structure on a backside of the device layer. The second interconnect structure includes a first dielectric layer on the backside of the device layer; a contact extending through the f...