US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 21 for "Stacked semiconductor structure and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,448,285, issued on Oct. 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Stacked semiconductor structure and method of forming the same" was invented by Chia-Hua Chu (Zhubei, Taiwan) and Chun-Wen Cheng (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A stacked semiconductor structure includes a first substrate. A multilayer interconnect is disposed over the first substrate. Metal sections are disposed over the multilayer interconnect. First bonding features are over the metal sections. A second substrate has a front surface. A cavity extends from the front surface into a depth D in the second substrate. A...