ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,155, issued on Oct. 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan).
"Stacked gate spacers" was invented by Jhon Jhy Liaw (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device and a method of forming the same. In an embodiment, the semiconductor device includes a fin extending from a substrate, a gate structure over the channel region, a first spacer extending along a sidewall of the lower portion of the gate structure, and a second spacer extending along a sidewall of the upper portion of the gate structure. The fin includes a channel region a...