ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,295, issued on Oct. 21, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structure and manufacturing method thereof" was invented by Georgios Vellianitis (Heverlee, Belgium), Marcus Johannes Henricus Van Dal (Linden, Belgium) and Gerben Doornbos (Kessel-Lo, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate; a resistance variable layer disposed over the substrate; a gate structure disposed over the resistance variable layer; a dielectric layer disposed over the resistance variable layer and surrounding the gate structure; a first contact plug disposed...