US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 21 for "Semiconductor metal layer structure over cell region" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,450,417, issued on Oct. 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor metal layer structure over cell region" was invented by Shang-Hsuan Chiu (Hsinchu, Taiwan), Chih-Liang Chen (Hsinchu, Taiwan), Hui-Zhong Zhuang (Kaohsiung, Taiwan), Chi-Yu Lu (New Taipei, Taiwan) and Jerry Chang Jui Kao (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Metallization structure for an integrated circuit. In one embodiment, an integrated circuit includes a metal-to-diffusion (MD) layer disposed over an active region of a cell, gates disposed over the active region of the cell, and a first metallization laye...