US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 21 for "Semiconductor device comprising first etch stop layer over first conductive feature over source/drain region" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,144, issued on Oct. 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device comprising first etch stop layer over first conductive feature over source/drain region" was invented by Pei-Yu Chou (Hsinchu, Taiwan) and Tze-Liang Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including an etch stop layer and a method of forming is provided. The semiconductor device may include a source/drain region and a gate structure, wherein a first etch stop layer is over a conductive plug to a source/drain region and a second etch stop layer is over the gate structure. The f...