US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 21 for "Resistive random access memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,298, issued on Oct. 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Resistive random access memory device" was invented by Jheng-Hong Jiang (Hsinchu, Taiwan), Shing-Huang Wu (Hsinchu, Taiwan) and Chia-Wei Liu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A RRAM device is provided. The RRAM device includes: a bottom electrode in a first dielectric layer; a switching layer in a second dielectric layer over the first dielectric layer, wherein a conductive path is formed in the switching layer when a forming voltage is applied; and a tapered top electrode region in a third dielectric layer over the s...