US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 21 for "Phase change material switch circuit for enhanced signal isolation and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,101, issued on Oct. 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Phase change material switch circuit for enhanced signal isolation and methods of forming the same" was invented by Wei Ting Hsieh (Hsinchu, Taiwan), Kuo-Ching Huang (Hsinchu, Taiwan), Yu-Wei Ting (Taipei, Taiwan), Kuo-Pin Chang (Zhubei, Taiwan) and Hung-Ju Li (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device structure includes a first series connection of a first phase change memory (PCM) switch and a second PCM switch. The first PCM switch includes a first heater line, a first PCM line, and a first contact electrode and a ...