US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 21 for "Method of manufacturing a semiconductor device and a semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,363, issued on Oct. 21, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of manufacturing a semiconductor device and a semiconductor device" was invented by Yu-Chen Wei (New Taipei, Taiwan), Feng-Inn Wu (Taichung, Taiwan) and Tzuyi Shieh (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method of manufacturing a semiconductor device, a sacrificial gate structure is formed over a substrate. The sacrificial gate structure includes a sacrificial gate electrode. A first dielectric layer is formed over the sacrificial gate structure. A second dielectric layer is formed over the first dielectric...