US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 21 for "Memory cell, memory device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,290, issued on Oct. 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory cell, memory device and manufacturing method thereof" was invented by Kai-Tai Chang (Kaohsiung, Taiwan), Chien-Min Lee (Hsinchu County, Taiwan), Tung-Ying Lee (Hsinchu, Taiwan) and Shy-Jay Lin (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device and a method of manufacturing the same are provided. The memory device includes a semiconductor substrate, an interconnect structure and a memory cell. The interconnect structure is disposed over the semiconductor substrate, and the memory cell is disposed over the ...