US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 21 for "Isolation for long and short channel devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,163, issued on Oct. 21, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Isolation for long and short channel devices" was invented by Tzu-Ging Lin (Kaohsiung, Taiwan) and Shun-Hui Yang (Jungli, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are multi-gate devices and methods for fabricating such devices. An exemplary method includes forming gate structures over a semiconductor material, wherein the gate structures include a long channel (LC) gate structure and a short channel (SC) gate structure; forming a patterned mask over the semiconductor material, wherein the LC gate structure and the SC gate...