US Patent Issued to Taiwan Semiconductor Manufacturing on Oct. 21 for "Inter-layer dielectrics and etch stop layers for transistor source/drain regions" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,118, issued on Oct. 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Inter-layer dielectrics and etch stop layers for transistor source/drain regions" was invented by Shahaji B. More (Hsinchu, Taiwan) and Chandrashekhar Prakash Savant (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a device includes: a gate structure over a substrate; a gate spacer adjacent the gate structure; a source/drain region adjacent the gate spacer; a first inter-layer dielectric (ILD) on the source/drain region, the first ILD having a first concentration of an impurity; and a second ILD on the first ILD, t...