ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,173, issued on Oct. 21, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Integrated circuits with gate cut features" was invented by Zhi-Chang Lin (Hsinchu County, Taiwan), Wei-Hao Wu (Hsinchu, Taiwan), Jia-Ni Yu (Hsinchu, Taiwan), Chih-Hao Wang (Hsinchu County, Taiwan) and Kuo-Cheng Ching (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Examples of an integrated circuit with gate cut features and a method for forming the integrated circuit are provided herein. In some examples, a workpiece is received that includes a substrate and a plurality of fins extending from the substrate. A first layer is formed ...