US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Oct. 21 for "Integrated circuits with finFET gate structures" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,174, issued on Oct. 21, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Integrated circuits with finFET gate structures" was invented by Kuo-Cheng Ching (Hsinchu County, Taiwan), Huan-Chieh Su (Changhua County, Taiwan), Zhi-Chang Lin (Hsinchu County, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Examples of an integrated circuit with FinFET devices and a method for forming the integrated circuit are provided herein. In some examples, an integrated circuit device includes a substrate, a fin extending from the substrate, a gate disposed on a first side of the fin, and a...